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We demonstrate graphene thickness-graded transistors with high electronmobility and low 1/f noise (f is a frequency). The device channel isimplemented with few-layer graphene with the thickness varied from a singlelayer in the middle to few-layers at the source and drain contacts. It wasfound that such devices have electron mobility comparable to the referencesingle-layer graphene devices while producing lower noise levels. The metaldoping of graphene and difference in the electron density of states between thesingle-layer and few-layer graphene cause the observed noise reduction. Theresults shed light on the noise origin in graphene.

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise