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We study the anisotropic orbital effect in the electric field tunability ofthe phonon induced spin-flip rate in quantum dots (QDs). Our study shows thatanisotropic gate potential enhances the spin-flip rate and reduces the levelcrossing point to a lower quantum dot radius due to the suppression of theLand$\acute{e}$ g-factor towards bulk crystal. In the range of $10^4-10^6$V/cm, the electric field tunability of the phonon induced spin-flip rate can bemanipulated through strong Dresselhaus spin-orbit coupling. These results mightassist the development of a spin based solid state quantum computer bymanipulating phonon induced spin-flip rate through spin-orbit coupling with theapplication of anisotropic gate potential in a regime where the g-factorchanges its sign.

The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots