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We investigate the low-temperature magneto-transport properties of monolayerepitaxial graphene films formed on the Si-face of semi-insulating 4H-SiCsubstrates by a high temperature sublimation process. A high-k top-gate on theepitaxial graphene is realized by inserting a fully oxidized nanometer thinaluminum film as a seeding layer, followed by an atomic layer depositionprocess. At low temperatures, the devices demonstrate a strong field effect bythe top gate with an on/off ratio of ~7 and an electron mobility up to ~3250cm^2/Vs. After the observation of the half-integer quantum Hall effect formonolayer epitaxial graphene films, detailed magneto-transport measurementshave been carried out including varying densities, temperatures, magneticfields and currents. We study the width of the distinguishable quantum-Hallplateau to plateau transition (Landau level index n=0 to n=1) as temperature(T) and current are varied. For both gate voltage and magnetic field sweeps andT>10 K the transition width goes as T^{-\kappa} with exponent \kappa ~0.42.This universal scaling exponent agrees well with those found in III-Vheterojunctions with short range alloy disorders and in exfoliated graphene.

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)