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The electronic band structure of thin films and superlattices made of Heuslercompounds with NiTiSn and NiZr$_{0.5}$Hf$_{0.5}$Sn composition was studied bymeans of polarization dependent hard x-ray photoelectron spectroscopy. Thelinear dichroism allowed to distinguish the symmetry of the valence states ofthe different types of layered structures. The films exhibit a larger amount of{\it "in-gap"} states compared to bulk samples. It is shown that the films andsuperlattices grown with NiTiSn as starting layer exhibit an electronicstructure close to bulk materials.

applied physics letters

Electronic structure and symmetry of valence states of epitaxial NiTiSn  and NiZr$_{0.5}$Hf$_{0.5}$Sn thin films by hard x-ray photoelectron  spectroscopy