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Although SiO2 is a typical insulator, we demonstrate an electrochemical characteristic of the Cu/Cu+ oxidation at the interface with 30 nm thick silicon dioxide thin films studied by cyclic voltammetry. This study reveals the process of anodic oxidation and subsequent reduction of oxidized Cu ions injected in the SiO2 layer with special attention to the kinetics of the redox process. We estimated the diffusion coefficient and the mobility of Cu ions in SiO2. The results gain deeper insight in the processes involved during resistive switching of Cu/SiO2 based nonvolatile memory devices.

Redox processes in silicon dioxide thin films using copper microelectrodes