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SrTiO$_{3}$ is one of the most popular insulating single-crystal substratesfor various complex-oxide thin film growths, because of its good lattice matchwith many complex oxide films. Here, we show that a common thin film processingtechnique, argon ion-milling, creates highly conducting layer on the surface ofSTO, not only at room temperatures but also at cryogenic temperatures at whichthermal diffusion is completely suppressed. Systematic \emph{in situ}four-point conductance measurements were taken on single-crystal STO substratesinside vacuum environment. The evolution of metallicity out of insulating STOfollows simple models based on oxygen vacancy doping effect. At cryogenictemperatures, ion milling created a thin - but much thicker than theargon-penetration depth - steady-state oxygen-vacant layer, leading to ahighly-concentric metallic state. Near room temperatures, however, significantthermal diffusion occurred and the metallic state continuously diffused intothe bulk, leaving only low concentraion of electron carriers on the surface.Analysis of the discrepancy between the experiments and the models alsoprovided evidence for vacany clustering, which seems to occur during anyvacancy formation process and affects the observed conductance. Theseobservations suggest that the transport properties of films processed on STOsubstrates using energetic methods such as ion milling need to be taken withcaution. On the other hand, if properly controlled, ionic bombardment could beused as a way to create selective conducting layers on the surface of STO fordevice applications.

Metal-insulator transition on SrTiO$_{3}$ surface induced by ionic-bombardment