English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

In this work undoped semi-insulating (SI) GaAs grown by vertical gradient freeze and liquid encapsulated Czochralski methods was studied by near-infrared absorption (NIRA), thermally stimulated current (TSC) and positron annihilation techniques. The positron experiments reveal both gallium and arsenic vacancies, as well as gallium and arsenic antisites, in the samples. By comparing the results from the TSC and positron measurements, the following relations are found in the defect concentrations: trap T2 correlates with the arsenic antisite and trap T5 with the arsenic vacancy. The ionized fraction of the arsenic-antisite-related EL2 defect is obtained from NIRA measurements. The positive charge of these ionized EL2 defects correlates with the net negative charge, 3[VGa3−]+2[GaAs2−]−[VAs+], related to the gallium vacancies and antisites and arsenic vacancies detected in positron measurements. The intrinsic defects may thus contribute significantly to the electrical compensation in SI GaAs.

Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs