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The chemical structure of the interface between silicon thin films and the transparent conductive oxide ZnO:Al has been investigated by hard x-ray photoelectron spectroscopy. By varying the excitation energy between 2010 and 8040 eV, we were able to probe the Si/ZnO interface buried below 12 nm Si. This allowed for the identification of changes induced by solid phase crystallization (SPC). Based on in-situ SPC annealing experiments, we find clear indications that the formation of Si-O bonds takes place at the expense of Zn-O bonds. Hence, the ZnO:Al acts as the oxygen source for the interfacial Si oxidation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644084

applied physics letters

Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si–O at the expense of Zn-O bonds