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We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript 2,3] emission features are observed above the conventional Si valence band maximum, with intensity scaling linearly with S concentration. The lineshape of the S-induced features change across the insulator-to-metal transition, indicating a significant modification of the local electronic structure concurrent with the change in macroscopic electronic behavior. The relationship between the Si L[subscript 2,3] XES spectral features and the anomalously high sub-band gap infrared absorption is discussed.Army Armament Research, Development, and Engineering Center (U.S.) (Contract W15QKN-07-P-0092)United States. Army Research Office (Grant W911NF-09-1-0470

Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur