English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Nominally identical permalloy nanowires, with widths down to 150 nm, werefabricated onto a single electron transparent Si$_{3}$N$_{4}$ membrane usingelectron beam lithography (EBL) and focused ion beam (FIB) milling.Transmission electron microscopy (TEM) experiments were performed to comparethe nanostructures produced by these two techniques in what we believe is thefirst direct comparison of fabrication techniques for nominally identicalnanowires. Both EBL and FIB methods produced high quality structures with edgeroughness being of the order of the mean grain size 5 -10 nm observed in thecontinuous films. However, significant grain growth was observed along theedges of the FIB patterned nanowires. Lorentz TEM \emph{in situ} imaging wascarried out to compare the magnetic behavior of the domain walls in thepatterned nanowires with anti-notches present to pin domain walls. The overallprocess of domain wall pinning and depinning at the anti-notches showedconsistent behaviour between nanowires fabricated by the two methods with theFIB structures having slightly lower characteristic fields compared to the EBLwires. However, a significant difference was observed in the formation of avortex structure inside the anti-notches of the EBL nanowires after depinningof the domain walls. No vortex structure was seen inside the anti-notches ofthe FIB patterned nanowires. Results from micromagnetic simulations suggestthat the vortex structure inside the anti-notch can be suppressed if thesaturation magnetization (M$_{s}$) is reduced along the nanowires edges. Whilstthe two fabrication methods show that well defined structures can be producedfor the dimensions considered here, the differences in the magnetic behaviorfor nominally identical structures may be an issue if such structures are to beused as conduits for domain walls in potential memory and logic applications.

Direct comparison of domain wall behavior in Permalloy nanowires patterned by electron beam lithography and focused ion beam milling