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We have carried out a coordinated experimental and theoretical study ofsingle-electron traps based on submicron aluminum islands and aluminum oxidetunnel junctions. The results of geometrical modeling using a modified versionof MIT's FastCap were used as input data for the general-purposesingle-electron circuit simulator MOSES. The analysis indicates reasonablequantitative agreement between theory and experiment for those trapcharacteristics which are not affected by random offset charges. The observeddifferences between theory and experiment (ranging from a few to fifty percent)can be readily explained by the uncertainty in the exact geometry of theexperimental nanostructures.Comment: 17 pages, 21 figures, RevTex, eps

Single-electron traps: A quantitative comparison of theory and experiment