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We report the hydrogenation of single and bilayer graphene by anargon-hydrogen plasma produced in a reactive ion etching (RIE) system.Electronic transport measurements in combination with Raman spectroscopy areused to link the electric mean free path to the optically extracted defectconcentration. We emphasize the role of the self-bias of the graphene insuppressing the erosion of the akes during plasma processing. We show thatunder the chosen plasma conditions the process does not introduce considerabledamage to the graphene sheet and that hydrogenation occurs primarily due to thehydrogen ions from the plasma and not due to fragmentation of water adsorbateson the graphene surface by highly accelerated plasma electrons. For this reasonthe hydrogenation level can be precisely controlled. The hydrogenation processpresented here can be easily implemented in any RIE plasma system.

A road to hydrogenating graphene by a reactive ion etching plasma