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Cross-sectional transmission electron microscopy (TEM) is used tocharacterize an amorphous layer observed at the interface in graphite andgraphene films grown via thermal decomposition of C-face 4H-SiC. The amorphouslayer does not to cover the entire interface, but uniform contiguous regionsspan microns of cross-sectional interface. Annular dark field scanningtransmission electron microscopy (ADF-STEM) images and electron energy lossspectroscopy (EELS) demonstrate that the amorphous layer is a carbon-richcomposition of Si/C. The amorphous layer is clearly observed in samples grownat 1600{\deg}C for a range of growth pressures in argon, but not at1500{\deg}C, suggesting a temperature-dependent formation mechanism.

Amorphous interface layer in thin graphite films grown on the carbon face of SiC