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The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc‐blende GaN/Ga0.85Al0.15N strained quantum well (100 A well width) have been investigated using a 6×6 Hamiltonian model including the heavy hole, light hole, and spin‐orbit split‐off bands. At the k=0 point, it is found that the light hole strongly couples with the spin‐orbit split‐off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin‐orbit split‐off hole. Optical transitions between the valence subbands and the conduction subbands obey the Δn=0 selection rule. At the k≠0 points, there is strong band mixing among the heavy hole, light hole, and spin‐orbit split‐off hole. The optical transitions do not obey the Δn=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode ...

Valence hole subbands and optical gain spectra of GaN/Ga1−xAlxN strained quantum wells