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Gate bias stress instability in organic field-effect transistors (OFETs) is amajor conceptual and device issue. This effect manifests itself by anundesirable shift of the transfer characteristics and is associated with longterm charge trapping. We study the role of the dielectric and the semiconductorseparately by producing OFETs with the same semiconductor (pentacene) combinedwith different dielectrics (SiO$_2$ and Cytop). We show, it is possible tofabricate devices which are immune to gate bias stress. For other materialcombinations, charge trapping occurs in the semiconductor alone, or in thedielectric.

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor