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The electronic structures of tetragonally distorted half-Heuselr compoundLaPtBi in the C1b structure are investigated in the framework of densityfunctional theory using the full potential linearized augmented plane withlocal spin density approximation method. The calculation results show that boththe band structures and the Fermi level can be tuned by using eithercompressive or tensile in-plane strain. A large bulk band gap of 0.3 eV can beinduced through the application of a compressive in-pane strain in LaPtBi withthe assumption of a relaxed volume of the unit cell. Our results could serve asa guidance to realize topological insulators in half-Heusler compounds bystrain engineering.

Influence of tetragonal distortion on the topological electronic structure of the half-Heusler compound LaPtBi from first principles