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We refine excitonic parameters of bulk GaN by means of time-of-flightspectroscopy of light pulses propagating through crystals. The influence ofelastic photon scattering is excluded by using the multiple reflections of thepulses from crystal boundaries. The shapes of these reflexes in the time-energyplane depict the variation of the group velocity induced by excitonicresonances. Modeling of the shapes, as well as other spectra, shows that ahomogeneous width of the order of 10 \mu eV characterizes the exciton-polaritonresonances within the crystal. The oscillator strength of A and Bexciton-polaritons is determined as 0.0022 and 0.0016, respectively.

Excitonic parameters of GaN studied by time-of-flight spectroscopy