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We report the observation by photoluminescence (PL) spectroscopy of cross‐barrier recombination between spatially separated two‐dimensional electron and hole gases confined respectively in the quantum well (QW) and collector accumulation layer of a GaAs/AlGaAs double‐barrier resonant tunneling structure. At the onset of the n=3(E3) resonance in the current–voltage characteristic, the energy of the cross‐barrier transition Ecr is found to coincide with that of the PL peak arising from recombination of electrons from the E3 confined level in the QW with n=1 confined hole states (E3lh recombination). Similarly, at the onset of the E4 resonance, Ecr≊E4lh. We show that this behavior arises as a consequence of the symmetrical potential distribution within the structure at the onsets of the resonances.

Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure