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Resistance measurements during uniaxial tensile deformation of very thin (10 nm) conducting oxide films deposited on 150 nm SiN films on polyethylene naphthalate are discussed. It is first shown that certain characteristics of resistance versus strain curves are representative for the fracture behavior of the SiN film and not for that of the thin conducting oxide film. Subsequently, it is shown that the hysteresis in curves of resistance as a function of strain offers a way to directly measure the intrinsic critical strain of the SiN film without the need to determine internal strains from independent (curvature) measurements that rely on knowledge of moduli and geometry. The method should be applicable, in general, to measure intrinsic critical strain and residual strains of thin brittle films on polymers. Advantages and limitations of the method are discussed.

Direct measurement of intrinsic critical strain and internal strain in barrier films