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Metal-oxide-semiconductor capacitor was fabricated using in situ O 2 plasma passivation and subsequent deposition of a HfO 2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O 2 ambient annealing on the fixed charge was systematically investigated. The O 2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 10 11 cm -2 compared to 4.5 10 12 cm -2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail. © 2011 American Institute of Physics.

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices