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We report dual-gate modulation of topological insulator field-effecttransistors (TI FETs) made on Bi2Te3 thin flakes with integration ofatomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopystudy shows that ALD Al2O3 is uniformly grown on this layer-structured channelmaterial. Electrical characterization reveals that the right selection of ALDprecursors and the related surface chemistry play a critical role in deviceperformance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gatecontrol on these devices, and the highest modulation rate of 76.1% is achievedby using simultaneous dual gate control.

Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors