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We study the effect of vertical electric-field (E-field) on the electronicproperties of the multilayer armchair graphene nanoribbon (aGNR). UnderE-field, the band structure of a bilayer aGNR undergoes interestingtransformations such as change in the electron velocity, sign of the electroneffective mass, band gap, the position of the band gap in the momentum space.Depending on the width of the aGNR and the applied E-field, the band gap of theaGNR may either be increased or decreased. When the applied E-field is above acritical value, the band gap of the bilayer aGNR is identical to that of thebilayer graphene, independent of the width. We also show that, forsemiconducting multilayer aGNR with more than two layers, the band gapdecreases with increasing E-field, resulting in a semiconductor-to-metallictransition. This can be utilized to enhance the performance of a graphene basedtransistor devices.

Multilayer graphene nanoribbon under vertical electric field