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We investigated the mganetic field effects (MFEs) on electron mobility intri-(8-hydroxyquinoline)-aluminum based light-emitting devices bytransient-electroluminescence method upon application of various offsetvoltages. It is found the rising edges of EL pulses are well overlapped and thefalling edges of EL pulses are separated for the magnetic field on and off whenVoffset=0 V and Voffset>Vturnon of the devices. The results suggest thebipolaron model and the triplet-polaron interaction model related to thecarriers mobilities are not the dominant mechanisms to explain the MFEs underour experimental conditions, and the magnetic field affects the carriersrecombination process is confirmed.

Investigation of the magnetic field effects on the electron mobility in tri-(8-hydroxyquinoline)-aluminum based light-emitting devices