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We demonstrate a nanostructure composed of partially etched annular trenchesin a suspended GaAs membrane, designed for efficient and moderately broadband(approx. 5 nm) emission extraction from single InAs quantum dots. Simulationsindicate that a dipole embedded in the nanostructure center radiates upwardsinto free space with a nearly Gaussian far-field, allowing a collectionefficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12XPurcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 %photon collection efficiency with a NA=0.42 objective, a 20X improvement overquantum dots in unpatterned GaAs. A fourfold exciton lifetime reductionindicates moderate Purcell enhancement.

A circular dielectric grating for vertical extraction of single quantum dot emission