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Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers aregrown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensionaltopological insulator (TI), showed good chemical and structural compatibilitywith In2Se3, a normal band insulator with large energy bandgap. The individuallayers in the SLs are very uniform and the hetero-interfaces are sharp.Therefore, such SL structures are potential candidates for explorations of thequantum size effects of TIs.

Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties