English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The segregation of As+ ions implanted into thin Er films deposited on n-Sisubstrates is studied after ErSi2-x formation. The same lowering of theeffective Schottky barrier height (SBH) below 0.12 eV is obtained at moderateannealing temperatures, regardless of the redistribution of As dopants at theErSi2-x/Si interface. On the other hand, if the implanted dose is slightlyenhanced, the annealing temperature required to reach sub-0.12-eV effective SBHcan be further reduced. This process enables the formation of very loweffective SBH ErSi2-x/n-Si contacts with a low thermal budget.

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation