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We study the electrical detection of spin accumulation at aferromagnet-silicon interface, which can be verified by measuring a Hanleeffect in three-terminal lateral devices. The device structures used consist ofa semiconducting Si channel and a high-quality Schottky tunnel contact. In alow current-bias region, the Hanle-effect curves are observed only underforward bias conditions. This can be considered that the electricaldetectability of the forward-biased contact is higher than that of thereverse-biased contact. This is possible evidence for the detection ofspin-polarized electrons created in a Si channel.

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact