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We study the effect of transversal electric-field (E-field) on the electronicproperties of multilayer armchair-graphene-nanoribbon (AGNR). The bandgap inmultilayer-AGNRs can be reversibly modulated with the application of E-field.At optimized widths, we obtain a semiconductor (SC) to metallic (M), as well asM-SC transition. The AGNR electronic bands undergo vivid transformations due tothe E-field, leading to phenomena such as increase in electron velocity, changein the sign of the electron effective mass, and the formation of lineardispersion with massless Dirac fermions similar to 2D-graphene. These effectsare very useful and can be utilized for device applications.

Transversal electric field effect in multilayer graphene nanoribbon