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We study by photoacoustic spectroscopy the band‐gap shift effect of CdS films. The CdS films were grown by chemical bath deposition and exposed to different annealing atmospheres over a range of temperature in which the sample structure changes. We show the band‐gap evolution and resistivity as a function of temperature of thermal annealing and determine the process that produces the best combination of high band‐gap energy and low resistivity.

Influence of thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin films