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Tunneling surface current through a thin ferromagnetic barrier in athree-dimensional topological insulator is shown to possess an extraordinaryresponse to the orientation of barrier magnetization. In contrast toconventional magnetoresistance devices that are sensitive to the relativealignment of two magnetic layers, a drastic change in the transmission currentis achieved by a single layer when its magnetization rotates by 90 degrees.Numerical estimations predict a giant magnetoresistance as large as 800 % atroom temperature and the proximate exchange interaction of 40 meV in thebarrier. When coupled with electrical control of magnetization direction, thisphenomenon may be used to enhance the gating function with potentially sharpturn-on/off for low power applications.

Unusual magnetoresistance in a topological insulator with a single ferromagnetic barrier