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Ion‐beam‐induced epitaxial crystallization (IBIEC) of Fe‐implanted Si(001) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of γ‐FeSi2, α‐FeSi2, and β‐FeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the γ‐α and α‐β phase transitions were determined as ≊11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases.

Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001)