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Hydrothermal ZnO wafers implanted at room temperature with 60 keV Sn^+ ions are examined by means of photoluminescence (PL), atomic force spectroscopy (AFM), and X-ray diffractometry techniques. The PL intensity significantly decreases in the wafers implanted to doses of 4.1 × 10^[13] ions/cm^2 and higher. The AFM measurements indicate that surface roughness variation is not the cause of the significant decrease in PL intensity. Furthermore, the PL deep level (DL) band peak blueshifts after illuminating the implanted samples with the He-Cd laser 325 nm line; meanwhile, the DL band intensity first increases and then decreases with illumination time. These abnormal behaviors of the DL band are discussed

Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions