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BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laserdeposition with different growth rates. With increasing growth rate the leakagecurrent is decreased and the conduction mechanism changes from bulk-limitedPoole-Frenkel emission to interface-limited Schottky emission. In the presentwork, we show that only the growth rate of the BiFeO3 films close to the metalcontacts has to be increased in order to reduce the leakage current and toobserve saturated polarization-electric field hysteresis loops.

Reduced leakage current in BiFeO3 thin films with rectifying contacts