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We report a direct STM observation of Ge hut array nucleation on the Si(001)surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei ofpyramids and wedges have been observed on the wetting layer MxN patchesstarting from the coverage of about 5.1 \r{A} (~3.6 ML). Further development ofhut arrays consists in simultaneous growth of the formerly appeared clustersand nucleation of new ones resulting in gradual rise of hut number density withincreasing surface coverage. Huts nucleate reconstructing the patch surfacefrom the usual c(4x2) or p(2x2) structure to one of two recently describedformations composed by epitaxially oriented Ge dimer pairs and chains of fourdimers.

An initial phase of Ge hut array formation at low temperature on Si(001)