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An analytical theory of non-uniformly doped or shaped PN-junction diodessubmitted to large-signals at high frequencies is presented. The resultingexpressions can be useful to evaluate the performance of semiconductor devicemodeling software. The transverse averaging technique is employed to reduce thethree-dimensional charge carrier transport equations into thequasi-one-dimensional form, with all physical quantities averaged out over thelongitudinally-varying cross section. Although, it is assumed an axialsymmetry, this approach gives rise to useful analytic expressions for thestatic current--voltage characteristics, the diffusion conductance, anddiffusion capacitance as a function of the signal amplitude and the crosssection non-uniformity.

Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes