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We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).Although the Fano factor in the anti-parallel configuration is close to unity,it is observed to be typically 0.91\pm0.01 in the parallel configuration. Itindicates the sub-Poissonian process of the electron tunneling in the parallelconfiguration due to the relevance of the spin-dependent coherent transport inthe low bias regime.

Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions