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GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band‐edge photoluminescence near 3.36 eV and 3.15–3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon‐assisted, donor‐acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of Physics

Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs