English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this paper we report what happens to a pristine oxide junctionPr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 (PCMO/Nb:STO), when it is subjected to cyclingof voltage bias of moderate value ({\pm}4V). It is found that the initialcycling leads to formation of a permanent state of lower resistance where thelower resistance arises predominantly due to development of a shunt across thedevice film (PCMO). On successive voltage cycling with increasing magnitude,this state transforms into states of successive lower resistance that can betransformed back to the initial stable state on cycling to below a certainbias. A simple model based on p-n junction with shunt has been used to obtaininformation on the change of the junction on voltage cycling. It has been shownthat the observation can be explained if the voltage cycling leads to loweringof barrier at the interface and also reduction in series resistance. It issuggested that this lowering can be related to the migration of oxygen ions andvacancies at the junction region. Cross-sectional imaging of the junction showsformation of permanent filamentary bridges across the thickness of the PCMOafter the pristine p-n junction is first taken through a voltage cycle, whichwould explain appearance of a finite shunt across the p-n junction.

Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions