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We demonstrate significant modification of the electron-phonon energy lossrate in a many-valley semiconductor system due to lattice mismatch inducedstrain. We show that the thermal conductance from the electron system to thephonon bath in strained n + Si, at phonon temperatures between 200 mK and 450mK, is more than an order of magnitude lower than that for a similar unstrainedsample.

Strain control of electron-phonon energy loss rate in many-valley semiconductors