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InGaN/GaN multiple quantum wells (MQWs) have been studied by usingcathodoluminescence hyperspectral imaging with high spatial resolution.Variations in peak emission energies and intensities across trench-likefeatures and V-pits on the surface of the MQWs are investigated. The MQWemission from the region inside trench-like features is red-shifted byapproximately 45 meV and more intense than the surrounding planar regions ofthe sample, whereas emission from the V-pits is blue-shifted by about 20 meVand relatively weaker. By employing this technique to the studiednanostructures it is possible to investigate energy and intensity shifts on a10 nm length scale.

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures