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Thermally driven atomic transport in HfO2/GeO2/substrate structures on Ge(001) and Si(001) was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO2/Ge interface. In addition, hafnium germanate is formed at 600 °C. Our data indicate that at 500 °C and above HfO2/GeO2 stacks are stable only if isolated from the Ge substrate.Thermally driven atomic transport in HfO2/GeO2/substrate structures on Ge(001) and Si(001) was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO2/Ge interface. In addition, hafnium germanate is formed at 600 °C. Our data indicate that at 500 °C and above HfO2/GeO2 stacks are stable only if isolated from the Ge substrate.

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate