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We present an original approach to fabricate single GaAs/AlGaAs core-shellnanowire with robust and reproducible transport properties. The core-shellstructure is buried in an insulating GaAs overlayer and connected as grown in atwo probe set-up using the highly doped growth substrate and a top diffusedcontact. The measured conductance shows a non-ohmic behavior with temperatureand voltage-bias dependences following power laws, as expected for a quasi-1Dsystem.

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires