English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The electrical conductivities of n‐doped silicon and, in particular Si:Bi, have been investigated for doping levels greater than the impurity critical concentration Nc for the metal‐nonmetal transitions. A general feature of the conductivity for concentration normalized to Nc is presented in the order σ(Bi)≳σ(As)≳σ(P)≳σ(Sb). For Si:Bi, the value of Nc is calculated for different criteria. The mobility of electrons presents a lower value compared to Si:P. The results for Si:P and Si:As are compared to the experimental data available in the literature.

Theoretical electronic properties of silicon-containing bismuth