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Electronic transport properties of DyScO₃/SrTiO₃ polar heterointerface grown at different oxygen pressures are studied. This DyScO₃/SrTiO₃ polar heterointerface exhibits much higher charge mobility, up to 10⁴ cm² V⁻¹ s⁻¹, compared to the LaAlO₃/SrTiO₃ system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO₃ film deposited under 10⁻⁴ mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction.Department of Applied PhysicsAuthor name used in this publication: J. Y. Da

Tunable electronic transport properties of DyScO3/SrTiO3 polar heterointerface