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A systematic study is presented on the optical and structural transformations induced in amorphous Ge1-xSbx alloys with Sb contents in the 0.71≤x≤0.91 range by irradiation with 250 ns laser pulses. The results show that only those films richer in Sb than the eutectics (x=0.85) show appreciable optical contrast upon irradiation. The dominant role of Sb in the performances of this family of alloys is analyzed. The transition from a low-reflectivity amorphous phase to a high-reflectivity extended solid solution of Ge in crystalline Sb is shown to be the key for a new generation of fast reversible optical storage materials in which amorphous-crystalline cycling using ultrashort laser pulses is feasible.This work was partially supported by the Comision In- terministerial de Ciencia y Tecnologia (CICYT, Spain) under Program TIC93. We greatly acknowledge Dr. F. Catalina (I. de Optica de1 CSIC, Madrid) and M. A. Ollacarizqueta (CIB, CSIC, Madrid) for many fruitful discussions and Y. Garcia (I. de Optica, CSIC, Madrid) for technical assistance.Peer Reviewe

Fast crystallizing GeSb alloys for optical data storage