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The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin filmwas epitaxially grown by rapid-thermal-annealing-induced germanidation of anFe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator(SOI) substrate. X-ray diffraction (XRD) measurements with the out-of-plane andin-plane configurations revealed that the CFG film was epitaxially grown alongthe [001] direction with the in-plane epitaxial relation of CFG[100]||GOI[100],although the film slightly contained a texture component. The strong (111) and(200) superlattice diffraction intensities indicated that the CFG film had ahigh degree of order for the L21 structure. Cross-sectional high-resolutiontransmission electron microscopy images of the film implied that the film hadthe dominant epitaxial and slight texture components, which was consistent withthe XRD measurements. The epitaxial component was grown directly on the BOXlayer of the SOI substrate without the formation of any interfacial layer.

Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing