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The resistive switching phenomenon in MgO-based tunnel junctions isattributed to the effect of charged defects inside the barrier. The presence ofelectron traps in the MgO barrier, that can be filled and emptied, locallymodifies the conductance of the barrier and leads to the resistive switchingeffects. A double-well model for trapped electrons in MgO is introduced totheoretically describe this phenomenon. Including the statistical distributionof potential barrier heights for these traps leads to a power-law dependence ofthe resistance as a function of time, under a constant bias voltage. This modelalso predicts a power-law relation of the hysteresis as a function of thevoltage sweep frequency. Experimental transport results strongly support thismodel and in particular confirm the expected power laws dependencies ofresistance. They moreover indicate that the exponent of these power laws varieswith temperature as theoretically predicted.

Random barrier double-well model for resistive switching in tunnel barriers