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High quantum yield, low transverse energy spread and prompt response timemake GaAs activated to negative electron affnity, an ideal candidate for aphotocathode in high brightness photoinjectors. Even after decades ofinvestigation, the exact mechanism of electron emission from GaAs is not wellunderstood. We show that a nanoscale surface roughness can affect thetransverse electron spread from GaAs by nearly an order of magnitude andexplain the seemingly controversial experimental results obtained so far. Thismodel can also explain the measured dependence of transverse energy spread onthe wavelength of incident light.

Effect of nano-scale surface roughness on transverse energy spread from GaAs photocathodes