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We fabricated carbon doped InAs/ InxGa1−xAs/ InxAl1−xAs heterostructures, which show p-type and\udn-type conductivity for different In contents. Two-dimensional hole gas in a structure with x\ud=0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant\udin InAs exhibits electron conductivity in InxGa1−xAs and InxAl1−xAs compounds with high indium\udcontent. A special doping design has been employed to obtain hole conductivity. As a result, the\udconductivity can be tuned from n-type to p-type with the In content and with different doping\udprofiles in these structures

Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping