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Materials with good carrier mobilities are desired for device applications,but in real devices the mobilities are usually limited by the presence ofinterfaces and contacts. Mobility degradation at semiconductor-dielectricinterfaces is generally attributed to defects at the interface or inside thedielectric, as is the case in Si/SiO2 structures, where processing does notintroduce detrimental defects in the semiconductor. In the case of SiC/SiO2structures, a decade of research focused on reducing or passivating interfaceand oxide defects, but the low mobilities have persisted. By invokingtheoretical results and available experimental evidence, we show that thermaloxidation generates carbon di-interstitial defects inside the semiconductorsubstrate and that they are a major cause of the poor mobility in SiC/SiO2structures.

Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures